A simplified formulation for calculation of minority-carrier effective lifetime
نویسندگان
چکیده
منابع مشابه
Minority Carrier Lifetime in Beryllium - Doped InAs / InAsSb Strained Layer
Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices Report Title Minority carrier lifetimes in undoped and Beryllium-doped Type-2 Ga-free, InAs/InAsSb strained layer superlattices (SLS) with energy gaps as low as 0.165 eV were determined from photoluminescence kinetics. The minority carrier lifetime of 450 ns at 77 K in the undoped SLS confirms a high material ...
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ژورنال
عنوان ژورنال: Results in Physics
سال: 2018
ISSN: 2211-3797
DOI: 10.1016/j.rinp.2018.10.008